As a photography enthusiast, I believe that everyone will pay attention to the appearance of a digital camera, brands and other dizzying parameters, but also to pay attention to a digital camera's soul component - the sensor. The process of digitalization of the camera industry is also a process of sensor development. The sensor's material, size, and effective pixels are the main parameters that determine its merits. The material of the sensor is divided into CCD (charge coupled) element and CMOS (complementary metal oxide conductor) device. The larger the size, the better the quality and the corresponding production cost is higher. The higher the pixel number, the finer the representation of the screen. The higher the degree, but not the same as the picture quality.
SLR cameras are also classified into different levels according to the size of the sensors used. The best one is a full-frame camera. The sensors used are also good. The photos taken by full-frame cameras are more detailed and clear. High, and the entry SLR's sensor size is usually only a few percent of the full frame. Of course, full-frame cameras are not the terminators in pursuit of picture quality. Some medium-format cameras use the largest sensors and they have better picture quality.
Of course, with the development of science and technology, the sensor technology will become more and more sophisticated. I believe in the near future, we will have better digital cameras, and we will also have a clearer picture texture and sensitivity.
Rectifier Diode A semiconductor device used to convert alternating current into direct current. The most important characteristic of a diode is its unidirectional conductivity. In the circuit, current can only flow from the positive pole of the diode and the negative pole flows out. Usually it contains a PN junction with two terminals, positive and negative. Its structure is shown in the figure. The carriers in the P region are holes, and the carriers in the N region are electrons, forming a certain barrier in the P region and the N region. When the applied voltage makes the P region positive with respect to the N region, the barrier is lowered, and the storage carriers are generated near the two sides of the barrier, which can pass a large current and have a low voltage drop (typically 0.7V), which is called positive. Wizard status. If the opposite voltage is applied, the barrier is increased to withstand a high reverse voltage, and a small reverse current (called reverse leakage current) is called a reverse blocking state. The rectifier diode has significant unidirectional conductivity. The rectifier diode can be fabricated from materials such as semiconductor germanium or silicon. The silicon rectifier diode has a high breakdown voltage, a small reverse leakage current, and good high temperature performance. Usually high-voltage and high-power rectifier diodes are made of high-purity single crystal silicon (it is easy to reverse breakdown when doping more). This device has a large junction area and can pass a large current (up to thousands of amps), but the operating frequency is not high, generally below several tens of kilohertz. Rectifier diodes are mainly used in various low-frequency half-wave rectification circuits. If full-wave rectification is required, they must be connected to a Rectifier Bridge.
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